Epitaxial Graphenes on Silicon Carbide

Beitrag in einer Fachzeitschrift
(Review-Artikel)


Details zur Publikation

Autorinnen und Autoren: Seyller T
Zeitschrift: Mrs Bulletin
Jahr der Veröffentlichung: 2010
Band: 35
Heftnummer: 04
Seitenbereich: 296-305
ISSN: 0883-7694


Abstract

The materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals is reviewed. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) is much different than growth on the C-terminated SiC(000 -1) surface, and discuss the physical structure of these graphenes. The unique electronic structure and transport properties of each type of epitaxial graphene is described, as well as progress toward the development of epitaxial graphene devices. This materials system is rich in subtleties, and graphene grown on the two polar faces differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik


Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


Forschungsbereiche

B Nanoelectronic Materials
Exzellenz-Cluster Engineering of Advanced Materials

Zuletzt aktualisiert 2019-16-05 um 16:08