Wang M, Jakubka F, Gannott F, Schweiger M, Zaumseil J (2014)
Publication Type: Journal article
Publication year: 2014
Book Volume: 15
Pages Range: 809-817
Journal Issue: 3
DOI: 10.1016/j.orgel.2014.01.013
We investigate the influence of small amounts of dispersed single-walled carbon nanotubes (SWNTs) on the contact resistance and device characteristics of bottom contact/top gate polymer field-effect transistors (FETs). Five conjugated polymers representing different classes of polymer semiconductors with different HOMO/LUMO levels are employed, namely, polythiophenes (P3HT), polyphenylenevinylenes (MDMO-PPV), polyfluorenes (F8T2), naphthalene-bis(dicarboximide) bithiophene copolymers (P(NDI2OD-T2)), and diketopyrrolo-pyrrole-bithiophene copolymers (DPPT-TT). In all cases the presence of dispersed SWNTs reduces non-ohmic contact resistance and lowers threshold and onset voltages for charge transport. In some cases inherent ambipolar charge transport in conjugated polymers (F8T2 and P(NDI2OD-T2)) is revealed. The concentration of the SWNTs within the semiconducting layer remains below the percolation limit and thus the apparent mobilities and on/off ratios are still determined by the polymer and independent of the specific type of the carbon nanotubes (metallic or semiconducting). The degree of enhancement depends both on the energy level offset between the injecting gold electrode and the HOMO/LUMO level (i.e., Schottky barrier) and the charge carrier mobility of the respective polymer. The simplicity of this injection enhancement method and its broad applicability make it a step toward high performance polymer transistors without injection limitations.
APA:
Wang, M., Jakubka, F., Gannott, F., Schweiger, M., & Zaumseil, J. (2014). Generalized enhancement of charge injection in bottom contact/top gate polymer field-effect transistors with single-walled carbon nanotubes. Organic Electronics, 15(3), 809-817. https://doi.org/10.1016/j.orgel.2014.01.013
MLA:
Wang, Ming, et al. "Generalized enhancement of charge injection in bottom contact/top gate polymer field-effect transistors with single-walled carbon nanotubes." Organic Electronics 15.3 (2014): 809-817.
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