Lee CY, Wang L, Kado Y, Kirchgeorg R, Schmuki P (2013)
Publication Type: Journal article
Publication year: 2013
Book Volume: 34
Pages Range: 308-311
DOI: 10.1016/j.elecom.2013.07.024
The present work reports the enhancement of the photoelectrochemical water splitting performance of in-situ silicon (Si)-doped nanotubular/nanoporous (NT/NP) layers. These layers were grown by self-organizing anodization on Fe-Si alloys of various Si content. The incorporation of Si is found to retard the layer growth rates, leads to a more pronounced nanotubular morphology, and most importantly, an improved photoelectrochemical behavior. By increasing Si content from 1, 2 to 5~at.% in the iron oxide NT/NP photoanodes, the photocurrent onset potential shifts favorably to lower values. At 1.3~V vs. RHE, hematite layer with 5~at.% Si shows a 5-fold increase of the photocurrent, i.e. 0.5~mA~cm$-$~2 in comparison to 0.1~mA~cm$-$~2 for the undoped samples. The study also reveals that a suitable layer thickness is essential to achieve a beneficial effect of the Si doping.
APA:
Lee, C.-Y., Wang, L., Kado, Y., Kirchgeorg, R., & Schmuki, P. (2013). Si-doped Fe2O3 nanotubular/nanoporous layers for enhanced photoelectrochemical water splitting. Electrochemistry Communications, 34, 308-311. https://dx.doi.org/10.1016/j.elecom.2013.07.024
MLA:
Lee, Chong-Yong, et al. "Si-doped Fe2O3 nanotubular/nanoporous layers for enhanced photoelectrochemical water splitting." Electrochemistry Communications 34 (2013): 308-311.
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