Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods

Chen W, Wen X, Latzel M, Heilmann M, Yang J, Dai X, Huang S, Shrestha S, Patterson R, Christiansen S, Conibeert G (2016)

Publication Type: Journal article

Publication year: 2016

Journal

ACS Applied Materials and Interfaces American Chemical Society

Book Volume: 8

Pages Range: 31887-31893

Journal Issue: 46

DOI: 10.1021/acsami.6b11675

Abstract

Using advanced two-photon excitation confocal microscopy, associated with time-resolved spectroscopy, we characterize InGaN/GaN multiple quantum wells on nanorod heterostructures and demonstrate the passivation effect of a KOH treatment. High-quality InGaN/GaN nanorods were fabricated using nanosphere lithography as a candidate material for light-emitting diode devices. The depth- and time-resolved characterization at the nanoscale provides detailed carrier dynamic analysis helpful for understanding the optical properties. The nanoscale spatially resolved images of InGaN quantum well and defects were acquired simultaneously. We demonstrate that nanorod etching improves light extraction efficiency, and a proper KOH treatment has been found to reduce the surface defects efficiently and enhance the luminescence. The optical characterization techniques provide depth-resolved and time-resolved carrier dynamics with nanoscale spatially resolved mapping, which is crucial for a comprehensive and thorough understanding of nanostructured materials and provides novel insight into the improvement of materials fabrication and applications.

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

Involved external institutions

Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light

Germany (DE) University of New South Wales (UNSW)

Australia (AU)

How to cite

APA:

Chen, W., Wen, X., Latzel, M., Heilmann, M., Yang, J., Dai, X.,... Conibeert, G. (2016). Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods. ACS Applied Materials and Interfaces, 8(46), 31887-31893. https://doi.org/10.1021/acsami.6b11675

MLA:

Chen, Weijian, et al. "Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods." ACS Applied Materials and Interfaces 8.46 (2016): 31887-31893.

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