Local work function measurements of epitaxial graphene

Filleter T, Emtsev K, Seyller T, Bennewitz R (2008)

Publication Type: Journal article

Publication year: 2008

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 93

Article Number: 133117

Journal Issue: 13

DOI: 10.1063/1.2993341

Abstract

The work function difference between single layer and bilayer graphene grown epitaxially on 6H-SiC(0001) has been determined to be 135$±$9 meV by means of the Kelvin probe force microscopy. Bilayer films are found to increase the work function as compared to single layer films. This method allows an unambiguous distinction between interface layer, single layer, and bilayer graphene. In combination with high-resolution topographic imaging, the complex step structure of epitaxial graphene on SiC can be resolved with respect to substrate and graphene layer steps.

Authors with CRIS profile

Thomas Seyller Lehrstuhl für Laserphysik

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Involved external institutions

McGill University CA Canada (CA)

How to cite

APA:

Filleter, T., Emtsev, K., Seyller, T., & Bennewitz, R. (2008). Local work function measurements of epitaxial graphene. Applied Physics Letters, 93(13). https://dx.doi.org/10.1063/1.2993341

MLA:

Filleter, Tobin, et al. "Local work function measurements of epitaxial graphene." Applied Physics Letters 93.13 (2008).

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