Local work function measurements of epitaxial graphene

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autorinnen und Autoren: Filleter T, Emtsev K, Seyller T, Bennewitz R
Zeitschrift: Applied Physics Letters
Jahr der Veröffentlichung: 2008
Band: 93
Heftnummer: 13
ISSN: 0003-6951


Abstract

The work function difference between single layer and bilayer graphene grown epitaxially on 6H-SiC(0001) has been determined to be 135$±$9 meV by means of the Kelvin probe force microscopy. Bilayer films are found to increase the work function as compared to single layer films. This method allows an unambiguous distinction between interface layer, single layer, and bilayer graphene. In combination with high-resolution topographic imaging, the complex step structure of epitaxial graphene on SiC can be resolved with respect to substrate and graphene layer steps.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik


Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


Einrichtungen weiterer Autorinnen und Autoren

McGill University


Forschungsbereiche

B Nanoelectronic Materials
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Filleter, T., Emtsev, K., Seyller, T., & Bennewitz, R. (2008). Local work function measurements of epitaxial graphene. Applied Physics Letters, 93(13). https://dx.doi.org/10.1063/1.2993341

MLA:
Filleter, Tobin, et al. "Local work function measurements of epitaxial graphene." Applied Physics Letters 93.13 (2008).

BibTeX: 

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