Mapping Charge-Carrier Density across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy

Grimm S, Jakubka F, Schießl S, Gannott F, Zaumseil J (2014)

Publication Type: Journal article

Publication year: 2014

Journal

Advanced Materials Wiley

Article Number: n/a

DOI: 10.1002/adma.201403655

Abstract

In situ confocal Raman microscopy is used to map the recombination zone (induced p-n junction) in an ambipolar carbon-nanotube-network transistor with high spatial resolution. The shift of the 2D mode (G' mode) depending on hole and electron accumulation serves as a measure for the local charge-carrier density and provides complementary information about charge transport and recombination in ambipolar transistors.

Authors with CRIS profile

Stefan Grimm Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe) (LSP) Florian Jakubka Professur für Werkstoffwissenschaften (Computational Materials Microscopy) Stefan Schießl Professur für Werkstoffwissenschaften (Computational Materials Microscopy) Florentina Gannott Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe) (LSP) Jana Zaumseil Professur für Werkstoffwissenschaften (Computational Materials Microscopy)

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

How to cite

APA:

Grimm, S., Jakubka, F., Schießl, S., Gannott, F., & Zaumseil, J. (2014). Mapping Charge-Carrier Density across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy. Advanced Materials. https://doi.org/10.1002/adma.201403655

MLA:

Grimm, Stefan, et al. "Mapping Charge-Carrier Density across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy." Advanced Materials (2014).

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