Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Held M, Schießl S, Miehler D, Gannott F, Zaumseil J (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 107

Article Number: 083301

Journal Issue: 8

DOI: 10.1063/1.4929461

Abstract

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfOx) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin ($łeq$70 nm), high capacitance (100--300 nF/cm2) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfOx dielectrics.

Authors with CRIS profile

Martin Held Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe) (LSP) Stefan Schießl Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe) (LSP) Florentina Gannott Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe) (LSP)

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

Involved external institutions

Ruprecht-Karls-Universität Heidelberg DE Germany (DE)

How to cite

APA:

Held, M., Schießl, S., Miehler, D., Gannott, F., & Zaumseil, J. (2015). Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors. Applied Physics Letters, 107(8). https://doi.org/10.1063/1.4929461

MLA:

Held, Martin, et al. "Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors." Applied Physics Letters 107.8 (2015).

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