Influence of metal/semiconductor interface on attainable piezoelectric and energy harvesting properties of ZnO

Novak N, Keil P, Froemling T, Schader F, Martin A, Webber KG, Roedel J (2019)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2019

Journal

Publisher: PERGAMON-ELSEVIER SCIENCE LTD

Book Volume: 162

Pages Range: 277-283

DOI: 10.1016/j.actamat.2018.10.008

Abstract

The piezoelectric coefficient is a measure to quantify the potential use of a material in energy harvesting and sensor applications. High concentration of free charge carriers in piezoelectric materials can significantly impede the use of generated piezoelectric charge. In this study, undoped semiconducting ZnO single crystals with both Ohmic and Schottky contacts were prepared to quantify the effective piezoelectric response at temperatures from 20 degrees C to -140 degrees C and frequencies of mechanical loading from 0.5 Hz to 160 Hz. It was demonstrated that the formation of an electrostatic potential barrier at the metal-semiconductor interface increases the overall resistance, which provides access to unbiased piezoelectric coefficients of ZnO single crystals even at room temperature. These findings were verified using semiconducting ZnO for energy harvesting at room temperature and relatively low loading frequency. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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APA:

Novak, N., Keil, P., Froemling, T., Schader, F., Martin, A., Webber, K.G., & Roedel, J. (2019). Influence of metal/semiconductor interface on attainable piezoelectric and energy harvesting properties of ZnO. Acta Materialia, 162, 277-283. https://doi.org/10.1016/j.actamat.2018.10.008

MLA:

Novak, Nikola, et al. "Influence of metal/semiconductor interface on attainable piezoelectric and energy harvesting properties of ZnO." Acta Materialia 162 (2019): 277-283.

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