Chemical trends of defects at HfO2:GaAs and Al2O 3:GaAs/InAs/InP/GaSb interfaces

Lin L, Guo Y, Gillen R, Robertson J (2013)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2013

Journal

Journal of Applied Physics AIP Publishing

Book Volume: 113

Article Number: 134103

Journal Issue: 13

DOI: 10.1063/1.4799364

Authors with CRIS profile

Roland Gillen Lehrstuhl für Experimentalphysik

Involved external institutions

University of Cambridge GB United Kingdom (GB)

How to cite

APA:

Lin, L., Guo, Y., Gillen, R., & Robertson, J. (2013). Chemical trends of defects at HfO2:GaAs and Al2O 3:GaAs/InAs/InP/GaSb interfaces. Journal of Applied Physics, 113(13). https://doi.org/10.1063/1.4799364

MLA:

Lin, Liang, et al. "Chemical trends of defects at HfO2:GaAs and Al2O 3:GaAs/InAs/InP/GaSb interfaces." Journal of Applied Physics 113.13 (2013).

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