Chemical trends of defects at HfO2:GaAs and Al2O 3:GaAs/InAs/InP/GaSb interfaces

Lin L, Guo Y, Gillen R, Robertson J (2013)


Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2013

Journal

Book Volume: 113

Article Number: 134103

Journal Issue: 13

DOI: 10.1063/1.4799364

Authors with CRIS profile

Involved external institutions

How to cite

APA:

Lin, L., Guo, Y., Gillen, R., & Robertson, J. (2013). Chemical trends of defects at HfO2:GaAs and Al2O 3:GaAs/InAs/InP/GaSb interfaces. Journal of Applied Physics, 113(13). https://dx.doi.org/10.1063/1.4799364

MLA:

Lin, Liang, et al. "Chemical trends of defects at HfO2:GaAs and Al2O 3:GaAs/InAs/InP/GaSb interfaces." Journal of Applied Physics 113.13 (2013).

BibTeX: Download