Tucto K, Flores L, Guerra J, Tofflinger J, Dulanto J, Grieseler R, Osvet A, Batentschuk M, Weingartner R (2017)
Publication Language: English
Publication Status: Published
Publication Type: Conference contribution, Conference Contribution
Publication year: 2017
Publisher: Materials Research Society
Book Volume: 2
Pages Range: 2989-2995
DOI: 10.1557/adv.2017.478
Terbium and ytterbium co-doped aluminum oxynitride thin films were grown onto silicon substrates using radiofrequency magnetron sputtering. Aluminum oxynitride samples doped with 4.6 at. % of Yb3+ and co-doped with 0.4 at. % of Tb3+ were obtained. The prepared samples were annealed from 150ºC to 850ºC in steps of 100ºC. By using energy dispersive X-ray analysis we measured the sample composition and the doping concentration. The emission intensities at different annealing temperatures were characterized using photoluminescence measurements upon excitation at 325 nm. The 5D4 7F5 main transition of Tb3+ and the characteristic near infrared emission at 980 nm of Yb3+ were recorded. In order to study the luminescence behavior of the samples in terms of a down conversion process, we have plotted the integrated areas of the main transition peaks versus the annealing temperature.
APA:
Tucto, K., Flores, L., Guerra, J., Tofflinger, J., Dulanto, J., Grieseler, R.,... Weingartner, R. (2017). Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells. In Materials Research Society (Eds.), Proceedings of the MRS Advances (pp. 2989-2995). Arizona, US: Materials Research Society.
MLA:
Tucto, K., et al. "Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells." Proceedings of the MRS Advances, Arizona Ed. Materials Research Society, Materials Research Society, 2017. 2989-2995.
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