Spatial distribution of charge carrier temperature and -lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy

Waldmüller S, Lang M, Wellmann P, Winnacker A (1994)


Publication Language: English

Publication Type: Conference contribution

Publication year: 1994

Pages Range: 231-234

Conference Proceedings Title: Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

Event location: Santa Barbara, CA US

ISBN: 0-7803-1476-X

DOI: 10.1109/ICIPRM.1994.328209

Abstract

The authors determine the minority carrier lifetime (/spl tau/) in semi-insulating InP in an indirect way by analyzing the high energy tail of the photoluminescence spectrum and extracting a charge carrier temperature T/sub e/ from this data. T/sub e/ turns out to be directly related to /spl tau/, being small for large /spl tau/ and vice versa. It is shown that a) variations of the electron temperature can be observed in typical sample of LEC-grown InP:Fe, b) these variations can be analyzed in terms of charge carrier lifetimes, c) these temperature (and lifetime) variations can be correlated with the PL-intensity distribution and the Fe-distribution in the material.

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How to cite

APA:

Waldmüller, S., Lang, M., Wellmann, P., & Winnacker, A. (1994). Spatial distribution of charge carrier temperature and -lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy. In IEEE (Eds.), Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) (pp. 231-234). Santa Barbara, CA, US.

MLA:

Waldmüller, S., et al. "Spatial distribution of charge carrier temperature and -lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy." Proceedings of the IEEE, 6th International Conference on InP and Related Materials, Santa Barbara, CA Ed. IEEE, 1994. 231-234.

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