Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics

Winnacker A, Hofmann HD, Wellmann P (2000)

Publication Type: Conference contribution, Conference Contribution

Publication year: 2000

Conference Proceedings Title: Proceedings of the third Vietnam-German Workshop on Physics and Engineering

Event location: Ho Chi Minh City VN

Authors with CRIS profile

Albrecht Winnacker Technische Fakultät Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

How to cite

APA:

Winnacker, A., Hofmann, H.-D., & Wellmann, P. (2000). Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics. In Proceedings of the third Vietnam-German Workshop on Physics and Engineering. Ho Chi Minh City, VN.

MLA:

Winnacker, Albrecht, Heinz-Dieter Hofmann, and Peter Wellmann. "Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics." Proceedings of the Third Vietnam-German Workshop on Physics and Engineering, Ho Chi Minh City 2000.

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