Electronic states tuning of InAs self-assembled quantum dots

Garcia J, Mankad T, Holtz O, Wellmann P, Petroff P (1998)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1998

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 72

Pages Range: 3172-3174

Journal Issue: 24

DOI: 10.1063/1.121583

Abstract

We demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the growth sequence during the capping of InAs islands, allows us to tune the thickness and lateral dimensions of the QDs while keeping the wetting layer thickness constant. Using the same method but embedding the tuned InAs islands into AlAs layers allows to further blueshift the photoluminescence emission to higher energies while keeping the wetting layer thickness constant. The main process responsible for the QDs size modification is consistent with a kinetically controlled materials redistribution of the InAs islands that minimizes the energy of the epitaxial layers at the start up of the GaAs capping deposition.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

University of California

United States (USA) (US)

How to cite

APA:

Garcia, J., Mankad, T., Holtz, O., Wellmann, P., & Petroff, P. (1998). Electronic states tuning of InAs self-assembled quantum dots. Applied Physics Letters, 72(24), 3172-3174. https://doi.org/10.1063/1.121583

MLA:

Garcia, J.M., et al. "Electronic states tuning of InAs self-assembled quantum dots." Applied Physics Letters 72.24 (1998): 3172-3174.

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