SiC crystal growth from the vapor and liquid phase
Hofmann HD, Bickermann M, Ebling D, Epelbaum B, Kadinski L, Selder M, Straubinger T, Weingärtner R, Wellmann P, Winnacker A (2001)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2001
Journal
Book Volume: 640
Article Number: H1.1
Event location: Boston, MA
Abstract
The status of SiC vapor growth technique (PVT) is reviewed and related innovative aspects are introduced. Problems of the preparation of SiC crystals with uniform electronic properties are addressed, especially the growth of semiinsulating SiC. An overview about the performance of numerical modeling is given as tool for the optimization of the PVT process. Development activities in the field of liquid phase processing for the preparation of SiC bulk crystals and micropipe healing are presented. Finally recent results on the present understanding of filamentary void formation/elimination (micropipes, macrodefects) are summarized.
Authors with CRIS profile
Matthias Bickermann
Technische Fakultät
Roland Weingärtner
Institute Materials for Electronics and Energy Technology (i-MEET)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
Involved external institutions
Germany (DE)How to cite
APA:
Hofmann, H.-D., Bickermann, M., Ebling, D., Epelbaum, B., Kadinski, L., Selder, M.,... Winnacker, A. (2001). SiC crystal growth from the vapor and liquid phase. Materials Research Society Symposium - Proceedings, 640. https://dx.doi.org/10.1557/PROC-640-H1.1
MLA:
Hofmann, Heinz-Dieter, et al. "SiC crystal growth from the vapor and liquid phase." Materials Research Society Symposium - Proceedings 640 (2001).
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