LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology

Rimmelspacher J, Weigel R, Hagelauer AM, Issakov V (2019)

Publication Language: English

Publication Status: Accepted

Publication Type: Conference contribution, Conference Contribution

Future Publication Type: Conference contribution

Publication year: 2019

Event location: Orlando, FL US

DOI: 10.1109/sirf.2019.8709120

Abstract

This paper presents a 60 GHz dual-core push-push VCO in a 45 nm partially depleted (PD) RF Silicon-on-Insulator (SOI) CMOS technology. The cores are coupled inductively via differential inductors. The best measured phase noise at 1 MHz offset from a 63 GHz carrier is −94.4 dBc/Hz. The wideband continuous frequency-tuning-range (FTR) is 16 %. The DC power dissipation is 76 mW including fundamental 30 GHz and second harmonic (H2) 60 GHz output buffers at 1 V power supply voltage. The measurement results of a reference single-core VCO design proves the relative phase noise improvement of the implemented core-coupling technique. The chip area excluding pads is 0.09 mm2.

Authors with CRIS profile

Johannes Rimmelspacher Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik Amelie Marietta Hagelauer Lehrstuhl für Technische Elektronik

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Rimmelspacher, J., Weigel, R., Hagelauer, A.M., & Issakov, V. (2019). LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology. In Proceedings of the Radio & Wireless Week (RWW): Silicon Monolithic Inegrated Circuits in RF Systems (SiRF). Orlando, FL, US.

MLA:

Rimmelspacher, Johannes, et al. "LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology." Proceedings of the Radio & Wireless Week (RWW): Silicon Monolithic Inegrated Circuits in RF Systems (SiRF), Orlando, FL 2019.

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