Wellmann P (2005)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2005
Book Volume: 11
Pages Range: 23-24
Journal Issue: 2
URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-18344397170&origin=inward
The use of modified physical vapor transport (MPVT), an alternative approach for silicon carbide growth to improve LED and Schottky-diode performance is described. MVPT uses an additional gas pipe to fine-tune the gas-phase composition and also achieves vastly improved aluminium-doping profiles in SiC. The MPVT process could also increase the yield of 4H-SiC substrates through polytype control and also lead to heavily phosphorus-doped substrates that reduce substrate resistance, and thereby enabling the production of low-power-loss Schottky diodes. The approach is also unaffected by the additional gas flux, with even the addition of propane or silane producing no change to a chemical vapor deposition (CVD).
APA:
Wellmann, P. (2005). Additional pipework opens up transistor applications for SiC. Compound Semiconductor, 11(2), 23-24.
MLA:
Wellmann, Peter. "Additional pipework opens up transistor applications for SiC." Compound Semiconductor 11.2 (2005): 23-24.
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