Is an antiparallel SiC-Schottky diode necessary? Calorimetric analysis of SiC-MOSFETs switching behavior
Kreutzer O, Billmann M, März M (2018)
Publication Language: English
Publication Type: Conference contribution, Conference Contribution
Publication year: 2018
Event location: Nürnberg
ISBN: 978-3-8007-4646-0
Abstract
Within
this paper the switching losses of a Wolfspeed 25mOhm bare die SiC-MOSFET are
measured in a hard switching 800 V DCDC-converter with five different
commutation partners. A small and a large SiC Schottky diode, an SiC-MOSFET
body diode and a combination of body and Schottky diode are compared at
different switching speeds and switching currents. The results show quite well
the reverse recovery charge dependence of SiC-MOSFET’s body
diode on switching speed. In contrast to common electric measurements where
losses are calculated, the calorimetric measurements reveal exactly what shall
be quantified: The temperature rise of the switching MOSFET
Authors with CRIS profile
Involved external institutions
How to cite
APA:
Kreutzer, O., Billmann, M., & März, M. (2018). Is an antiparallel SiC-Schottky diode necessary? Calorimetric analysis of SiC-MOSFETs switching behavior. In VDE (Eds.), Proceedings of the 2018 PCIM Europe. Nürnberg, DE.
MLA:
Kreutzer, Otto, Markus Billmann, and Martin März. "Is an antiparallel SiC-Schottky diode necessary? Calorimetric analysis of SiC-MOSFETs switching behavior." Proceedings of the 2018 PCIM Europe, Nürnberg Ed. VDE, 2018.
BibTeX: Download