Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation

Roll G, Jakschik S, Goldmann M, Wachowiak A, Mikolajick T, Frey L (2012)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2012

Article Number: 6210165

Event location: Hsinchu

ISBN: 9781457720840

DOI: 10.1109/VLSI-TSA.2012.6210165

Authors with CRIS profile

Guntrade Roll Lehrstuhl für Elektronische Bauelemente Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

NaMLab gGmbH DE Germany (DE)

How to cite

APA:

Roll, G., Jakschik, S., Goldmann, M., Wachowiak, A., Mikolajick, T., & Frey, L. (2012). Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation. In Proceedings of the 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012. Hsinchu.

MLA:

Roll, Guntrade, et al. "Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation." Proceedings of the 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012, Hsinchu 2012.

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