Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs

Huerner A, Heckel T, Endruschat A, Erlbacher T, Bauer AJ, Frey L (2018)

Publication Status: Published

Publication Type: Conference contribution

Publication year: 2018

Publisher: Trans Tech Publications Ltd

Pages Range: 901-904

ISBN: 9783035711455

DOI: 10.4028/www.scientific.net/MSF.924.901

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Huerner, A., Heckel, T., Endruschat, A., Erlbacher, T., Bauer, A.J., & Frey, L. (2018). Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs. In Proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 (pp. 901-904). Trans Tech Publications Ltd.

MLA:

Huerner, A., et al. "Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs." Proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 Trans Tech Publications Ltd, 2018. 901-904.

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