Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 °C

Matthus C, Erlbacher T, Hess A, Bauer AJ, Frey L (2017)


Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2017

Journal

Publisher: Institute of Electrical and Electronics Engineers Inc.

Book Volume: 64

Pages Range: 3399-3404

Article Number: 7949050

Journal Issue: 8

DOI: 10.1109/TED.2017.2711271

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Involved external institutions

How to cite

APA:

Matthus, C., Erlbacher, T., Hess, A., Bauer, A.J., & Frey, L. (2017). Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 °C. IEEE Transactions on Electron Devices, 64(8), 3399-3404. https://dx.doi.org/10.1109/TED.2017.2711271

MLA:

Matthus, Christian, et al. "Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 °C." IEEE Transactions on Electron Devices 64.8 (2017): 3399-3404.

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