Bogen S, Herden M, Frey L, Ryssel H (1996)
Publication Status: Published
Publication Type: Conference contribution, Conference Contribution
Publication year: 1996
Publisher: IEEE
City/Town: Piscataway, NJ, United States
Pages Range: 792-795
Conference Proceedings Title: Proceedings of the 1996 11th International Conference on Ion Implantation Technology
Event location: Austin, TX, USA
URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-0030373286∨igin=inward
APA:
Bogen, S., Herden, M., Frey, L., & Ryssel, H. (1996). Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon. In Ishida E.; Mehta S.; Banerjee S.; Current M.; Smith T.C.; et al (Eds.), Proceedings of the 1996 11th International Conference on Ion Implantation Technology (pp. 792-795). Austin, TX, USA: Piscataway, NJ, United States: IEEE.
MLA:
Bogen, S., et al. "Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon." Proceedings of the Proceedings of the 1996 11th International Conference on Ion Implantation Technology, Austin, TX, USA Ed. Ishida E.; Mehta S.; Banerjee S.; Current M.; Smith T.C.; et al, Piscataway, NJ, United States: IEEE, 1996. 792-795.
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