Model for the electronic stopping of channeled ions in silicon around the stopping power maximum

Frey L, Ryssel H, Bogen S, Hobler G, Simionescu A (1995)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1995

Journal

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Elsevier

Book Volume: 106

Pages Range: 47-50

DOI: 10.1016/0168-583X(95)00676-1

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

How to cite

APA:

Frey, L., Ryssel, H., Bogen, S., Hobler, G., & Simionescu, A. (1995). Model for the electronic stopping of channeled ions in silicon around the stopping power maximum. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 106, 47-50. https://doi.org/10.1016/0168-583X(95)00676-1

MLA:

Frey, Lothar, et al. "Model for the electronic stopping of channeled ions in silicon around the stopping power maximum." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 106 (1995): 47-50.

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