Analytical description of high energy implantation profiles of boron and phosphorus into crystalline silicon

Gong L, Bogen S, Frey L, Jung W, Ryssel H (1994)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1994

Journal

Radiation Effects and Defects in Solids Taylor & Francis: STM, Behavioural Science and Public Health Titles / Taylor & Francis

Book Volume: 127

Pages Range: 385-395

DOI: 10.1080/10420159408221046

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

How to cite

APA:

Gong, L., Bogen, S., Frey, L., Jung, W., & Ryssel, H. (1994). Analytical description of high energy implantation profiles of boron and phosphorus into crystalline silicon. Radiation Effects and Defects in Solids, 127, 385-395. https://dx.doi.org/10.1080/10420159408221046

MLA:

Gong, Li, et al. "Analytical description of high energy implantation profiles of boron and phosphorus into crystalline silicon." Radiation Effects and Defects in Solids 127 (1994): 385-395.

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