End-of-range disorder influenced by inherent oxygen in silicon

Antos L, Gyulai J, Khanh N, Frey L (1992)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1992

Journal

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Elsevier

Book Volume: 71

Pages Range: 399-405

Journal Issue: 4

DOI: 10.1016/0168-583X(92)95357-W

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

How to cite

APA:

Antos, L., Gyulai, J., Khanh, N., & Frey, L. (1992). End-of-range disorder influenced by inherent oxygen in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 71(4), 399-405. https://doi.org/10.1016/0168-583X(92)95357-W

MLA:

Antos, L., et al. "End-of-range disorder influenced by inherent oxygen in silicon." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 71.4 (1992): 399-405.

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