Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Wilhelm M, Rieth M, Brandl M, Wibowo RA, Hock R, Wellmann P
Zeitschrift: Thin Solid Films
Verlag: Elsevier
Jahr der Veröffentlichung: 2015
Band: 577
Seitenbereich: 88-93
ISSN: 0040-6090
Sprache: Englisch


Abstract


In order to reduce the residual stress caused by the mismatch of thermal expansion coefficients of 3C-SiC layers grown on Si after cooling down to room temperature, the growth temperature was reduced from usually above 1300 degrees C to 1200 degrees C. Epitaxial layers with high crystalline quality were grown on 1 x 1 cm(2) (100) Si substrates. The layers were evaluated by means of x-ray diffraction (XRD), Raman measurements, scanning electron microscopy and atomic force microscopy. Full width at half maximum values of 0.19 degrees for XRD rocking curve measurements of the (200) 3C-SiC peak were achieved, indicating high crystalline quality of the layers and epitaxial growth. For optimized growth at 1200 degrees C a high C/Si-ratio, on-axis substrates and a layer thickness of over 1 mu m are necessary. (C) 2015 Elsevier B.V. All rights reserved.



FAU-Autoren / FAU-Herausgeber

Brandl, Marco
Lehrstuhl für Kristallographie und Strukturphysik
Hock, Rainer Prof. Dr.
Wilhelm, Martin
Professur für Kristallographie und Strukturphysik
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Rieth, Marcel
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Zitierweisen

APA:
Wilhelm, M., Rieth, M., Brandl, M., Wibowo, R.A., Hock, R., & Wellmann, P. (2015). Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C. Thin Solid Films, 577, 88-93. https://dx.doi.org/10.1016/j.tsf.2015.01.049

MLA:
Wilhelm, Martin, et al. "Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C." Thin Solid Films 577 (2015): 88-93.

BibTeX: 

Zuletzt aktualisiert 2018-21-07 um 23:23