Wilhelm M, Rieth M, Brandl M, Wibowo RA, Hock R, Wellmann P (2015)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2015
Publisher: Elsevier
Book Volume: 577
Pages Range: 88-93
DOI: 10.1016/j.tsf.2015.01.049
In order to reduce the residual stress caused by the mismatch of thermal expansion coefficients of 3C-SiC layers grown on Si after cooling down to room temperature, the growth temperature was reduced from usually above 1300 degrees C to 1200 degrees C. Epitaxial layers with high crystalline quality were grown on 1 x 1 cm(2) (100) Si substrates. The layers were evaluated by means of x-ray diffraction (XRD), Raman measurements, scanning electron microscopy and atomic force microscopy. Full width at half maximum values of 0.19 degrees for XRD rocking curve measurements of the (200) 3C-SiC peak were achieved, indicating high crystalline quality of the layers and epitaxial growth. For optimized growth at 1200 degrees C a high C/Si-ratio, on-axis substrates and a layer thickness of over 1 mu m are necessary. (C) 2015 Elsevier B.V. All rights reserved.
APA:
Wilhelm, M., Rieth, M., Brandl, M., Wibowo, R.A., Hock, R., & Wellmann, P. (2015). Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C. Thin Solid Films, 577, 88-93. https://dx.doi.org/10.1016/j.tsf.2015.01.049
MLA:
Wilhelm, Martin, et al. "Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C." Thin Solid Films 577 (2015): 88-93.
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