Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC

Hürner A, Di Benedetto L, Erlbacher T, Mitlehner H, Bauer A, Frey L (2015)

Publication Status: Published

Publication Type: Authored book, Volume of book series

Publication year: 2015

Publisher: Trans Tech Publications Ltd

Pages Range: 656-659

ISBN: 9783038354789

DOI: 10.4028/www.scientific.net/MSF.821-823.656

Abstract

In this study, a robust double-ring junction-termination-extension (DR-JTE) for highvoltage pn-diodes is presented and analyzed using numerical simulations. As figured out, the DRJTE reduces the electrical field at both, the edge of the single-JTE region and the mesa-transition, respectively. Thereby, due to the reduction of the electrical field, the maximum breakdown voltage is increased to 91.5% of the theoretical, parallel-plane breakdown voltage of 6.5 kV and the maximum acceptable deviation of the optimum implantation dose is twice than that of the single- JTE structure. Furthermore, due to the internal ring, the mesa-transition is shielded from the electrical field and therefore the breakdown voltage is much less affected by the angle of the mesa.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Related research project(s)

SiC-BIFET: Untersuchungen zu bipolaren SiC-Feldeffekttransistoren für das Mittelspannungsnetz Sept. 1, 2010 - July 10, 2017

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Hürner, A., Di Benedetto, L., Erlbacher, T., Mitlehner, H., Bauer, A., & Frey, L. (2015). Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC. Trans Tech Publications Ltd.

MLA:

Hürner, Andreas, et al. Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC. Trans Tech Publications Ltd, 2015.

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