Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity
Oehlschläger F, Juillaguet S, Peyre H, Calmassel J, Wellmann P (2009)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2009
Journal
Book Volume: 615-617
Pages Range: 259-262
DOI: 10.4028/www.scientific.net/MSF.615-617.259
Abstract
Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following, work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2" at room- and low temperature in a non-destructive way.
Authors with CRIS profile
Felix Oehlschläger
Institute Materials for Electronics and Energy Technology (i-MEET)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
France (FR)How to cite
APA:
Oehlschläger, F., Juillaguet, S., Peyre, H., Calmassel, J., & Wellmann, P. (2009). Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity. Materials Science Forum, 615-617, 259-262. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.259
MLA:
Oehlschläger, Felix, et al. "Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity." Materials Science Forum 615-617 (2009): 259-262.
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