Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy
Beitrag in einer Fachzeitschrift
Details zur Publikation
Autor(en): Lauffer P, Emtsev K, Graupner R, Ley L, Seyller T, Reshanov S, Weber HB
Zeitschrift: → Physical Review B |
Verlag: American Physical Society
Jahr der Veröffentlichung: 2008
Band: 77
Seitenbereich: 155426
ISSN: 1098-0121
Abstract
Epitaxial growth of graphene on SiC surfaces by solid state graphitization is a promising route for future development of graphene based electronics. In the present work, we have studied the morphology, atomic scale structure, and electronic structure of thin films of few-layer graphene (FLG) on SiC(0001) by scanning tunneling microscopy and spectroscopy (STS). We show that a quantitative evaluation of the roughness induced by the interface is a tool for determining the layer thickness of FLG. We present and interpret thickness dependent tunneling spectra, which can serve as an additional fingerprint for the determination of the layer thickness. By performing spatially resolved STS, we find evidence that the charge distribution in bilayer graphene is inhomogeneous. © 2008 The American Physical Society.
FAU-Autoren / FAU-Herausgeber
| | | Naturwissenschaftliche Fakultät |
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| | | Naturwissenschaftliche Fakultät |
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| | | Naturwissenschaftliche Fakultät |
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| Weber, Heiko B. Prof. Dr. |
| | Lehrstuhl für Angewandte Physik |
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Zusätzliche Organisationseinheit(en)
→ Exzellenz-Cluster Engineering of Advanced Materials |
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Zitierweisen
APA: | Lauffer, P., Emtsev, K., Graupner, R., Ley, L., Seyller, T., Reshanov, S., & Weber, H.B. (2008). Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy. Physical Review B, 77, 155426. https://dx.doi.org/10.1103/PhysRevB.77.155426 |
MLA: | Lauffer, Peter, et al. "Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy." Physical Review B 77 (2008): 155426. |