Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell

Hirschmann J, Faber H, Halik M (2012)

Publication Language: English

Publication Type: Journal article, Report

Publication year: 2012

Journal

Nanoscale Royal Society of Chemistry

Book Volume: 4

Pages Range: 444-447

URI: http://pubs.rsc.org/en/content/articlelanding/2012/nr/c2nr11589a#!divAbstract

DOI: 10.1039/C2NR11589A

Authors with CRIS profile

Johannes Hirschmann Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe) Hendrik Faber Professur für Werkstoffwissenschaften (Polymerwerkstoffe) Marcus Halik Professur für Werkstoffwissenschaften (Polymerwerkstoffe)

How to cite

APA:

Hirschmann, J., Faber, H., & Halik, M. (2012). Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell. Nanoscale, 4, 444-447. https://dx.doi.org/10.1039/C2NR11589A

MLA:

Hirschmann, Johannes, Hendrik Faber, and Marcus Halik. "Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell." Nanoscale 4 (2012): 444-447.

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