Understanding the growth mechanism of graphene on Ge/Si(001) surfaces

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Dabrowski J, Lippert G, Avila J, Baringhaus J, Colambo I, Dedkov Y, Herziger F, Lupina G, Maultzsch J, Schaffus T, Schroeder T, Sowinska M, Tegenkamp C, Vignaud D, Asensio MC
Zeitschrift: Scientific Reports
Verlag: NATURE PUBLISHING GROUP
Jahr der Veröffentlichung: 2016
Band: 6
ISSN: 2045-2322


Abstract


The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C2H4) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy as well as density functional theory (DFT) calculations, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by 30 degrees with respect to each other. The growth mode is attributed to the mechanism when small graphene "molecules" nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process.



FAU-Autoren / FAU-Herausgeber

Maultzsch, Janina Prof. Dr.
Lehrstuhl für Experimentalphysik


Autor(en) der externen Einrichtung(en)
Brandenburgische Technische Universität Cottbus
Gottfried Wilhelm Leibniz Universität Hannover
Leibniz Institut für innovative Mikroelektronik
Synchrotron SOLEIL
Technische Universität Berlin
University of Lille Nord de France / Université Lille Nord de France / Université Lille II


Zitierweisen

APA:
Dabrowski, J., Lippert, G., Avila, J., Baringhaus, J., Colambo, I., Dedkov, Y.,... Asensio, M.-C. (2016). Understanding the growth mechanism of graphene on Ge/Si(001) surfaces. Scientific Reports, 6. https://dx.doi.org/10.1038/srep31639

MLA:
Dabrowski, J, et al. "Understanding the growth mechanism of graphene on Ge/Si(001) surfaces." Scientific Reports 6 (2016).

BibTeX: 

Zuletzt aktualisiert 2019-28-02 um 06:10