Analytical electron microscopy study on gallium nitride systems doped with manganese and iron

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autorinnen und Autoren: Meingast A, Quezada AN, Devillers T, Kovacs A, Albu M, Fladischer S, Bonanni A, Kothleitner G
Zeitschrift: Semiconductor Science and Technology
Verlag: Institute of Physics: Hybrid Open Access
Jahr der Veröffentlichung: 2015
Band: 30
Heftnummer: 3
ISSN: 0268-1242


Abstract


Modulated structures of gallium nitride (GaN) doped with transition metal ions (here Fe, Mn) are investigated by analytical (scanning) transmission electron microscopy to gain insight into the structural arrangement and chemical composition of the material, known to be critically correlated to the magnetic response and hence the functionality of these technologically relevant systems. Three classes of samples are considered: (i) homogeneous (dilute) (Ga, Mn) N; (ii) delta-Mn-doped (Ga, delta-Mn) N and phase separated (Ga, Fe) N, containing Fe-rich nanocrystals. The combination of various microscopic techniques employed, allows for a quantitative determination of the distribution of the magnetic ions in the samples, providing essential information on the structural and chemical asset of these systems.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Rechberger, Stefanie Dr.
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)


Zusätzliche Organisationseinheit(en)
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)


Einrichtungen weiterer Autorinnen und Autoren

Forschungszentrum Jülich / Research Centre Jülich (FZJ)
Johannes Kepler Universität (JKU) Linz
Technische Universität Graz


Zitierweisen

APA:
Meingast, A., Quezada, A.N., Devillers, T., Kovacs, A., Albu, M., Fladischer, S.,... Kothleitner, G. (2015). Analytical electron microscopy study on gallium nitride systems doped with manganese and iron. Semiconductor Science and Technology, 30(3). https://dx.doi.org/10.1088/0268-1242/30/3/035002

MLA:
Meingast, Arno, et al. "Analytical electron microscopy study on gallium nitride systems doped with manganese and iron." Semiconductor Science and Technology 30.3 (2015).

BibTeX: 

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