Chiral Index Dependence of the G(+) and G(-) Raman Modes in Semiconducting Carbon Nanotubes

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Telg H, Duque JG, Staiger M, Tu X, Hennrich F, Kappes MM, Zheng M, Maultzsch J, Thomsen C, Doorn SK
Zeitschrift: Acs Nano
Verlag: AMER CHEMICAL SOC
Jahr der Veröffentlichung: 2012
Band: 6
Heftnummer: 1
Seitenbereich: 904-911
ISSN: 1936-0851


Abstract


Raman spectroscopy on the radial breathing mode Is a common tool to determine the diameter d or chiral indices (n,m) of single-wall carbon nanotubes. In this work we present an alternative technique to determine d and (n,m) based on the high-energy G(-) mode. From resonant Raman scattering experiments on 14 highly purified single chirality (n,m) samples we obtain the diameter, chiral angle, and family dependence of the G(-) and G(+) peak position. Considering theoretical predictions we discuss the origin of these dependences with respect to rehybridization of the carbon orbitals, confinement, and electron-electron interactions. The relative Raman intensities of the two peaks have a systematic chiral angle dependence in agreement with theories considering the symmetry of nanotubes and the associated phonons.



FAU-Autoren / FAU-Herausgeber

Maultzsch, Janina Prof. Dr.
Lehrstuhl für Experimentalphysik


Autor(en) der externen Einrichtung(en)
Karlsruhe Institute of Technology (KIT)
Los Alamos National Laboratory
National Institute of Standards and Technology (NIST)
Technische Universität Berlin


Zitierweisen

APA:
Telg, H., Duque, J.G., Staiger, M., Tu, X., Hennrich, F., Kappes, M.M.,... Doorn, S.K. (2012). Chiral Index Dependence of the G(+) and G(-) Raman Modes in Semiconducting Carbon Nanotubes. Acs Nano, 6(1), 904-911. https://dx.doi.org/10.1021/nn2044356

MLA:
Telg, Hagen, et al. "Chiral Index Dependence of the G(+) and G(-) Raman Modes in Semiconducting Carbon Nanotubes." Acs Nano 6.1 (2012): 904-911.

BibTeX: 

Zuletzt aktualisiert 2018-08-08 um 15:09