The formation and stability of sub-micron clusters in silane and argon plasmas

Journal article


Publication Details

Author(s): Hundhausen M, Ley L
Journal: Journal of Non-Crystalline Solids
Publisher: Elsevier
Publication year: 1991
Volume: 137&138
Pages range: 795
ISSN: 0022-3093


Abstract

We have studied the formation of small silicon clusters in the plasma of a capacitively coupled RF-glow discharge deposition system used for the preparation of a-Si:H. These particles were detected by light scattering and are found to grow from SiH4 in the gas phase only if the temperature during deposition is substantially lower than in plasmas normally used for the deposition of device-quality films. We find that the particles are confined to the inner plasma region. This is explained by the fact that the particles become negatively charged due to the higher mobility of electrons vs. the positive ions. On account of their charge the particles are confined to the positive plasma region. The influence of the negative charge on the defect density of the a-Si:H forming the small particles is discussed. © 1991 Elsevier Science Publishers B.V. All rights reserved.


FAU Authors / FAU Editors

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät


How to cite

APA:
Hundhausen, M., & Ley, L. (1991). The formation and stability of sub-micron clusters in silane and argon plasmas. Journal of Non-Crystalline Solids, 137&138, 795. https://dx.doi.org/10.1016/S0022-3093(05)80240-6

MLA:
Hundhausen, Martin, and Lothar Ley. "The formation and stability of sub-micron clusters in silane and argon plasmas." Journal of Non-Crystalline Solids 137&138 (1991): 795.

BibTeX: 

Last updated on 2018-09-08 at 04:55