Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes

Pons M, Blanquet E, Dedulle J, Ucar M, Wellmann P, Danielsson Ö, Ferret P, Di Cioccio L, Baillet F, Chaussende D, Madar R (2005)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2005

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications

City/Town: Switzerland

Book Volume: 483

Pages Range: 3-8

Conference Proceedings Title: Materials Science Forum (Volumes 483-485)

Event location: Bologna IT

DOI: 10.4028/www.scientific.net/MSF.483-485.3

Abstract

Modeling and simulation of the SiC growth process is sufficiently mature to be used as a training tool for engineers as well as a decision making tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a "daily interaction". The main limitation in SiC growth modeling is the accurate knowledge of physical, thermal, radiative, chemical and electrical data for the different components of the reactor. This is the weakest link in developing completely predictive models. In addition, the link between the thermochemical history of the grown material and its structure and defects still needs further development and input of experimental data.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

CEA-Leti (Laboratoire d'electronique des technologies de l'information) FR France (FR) Linköping University SE Sweden (SE) Institut National Polytechnique de Grenoble - Grenoble Institute of Technology FR France (FR)

How to cite

APA:

Pons, M., Blanquet, E., Dedulle, J., Ucar, M., Wellmann, P., Danielsson, Ö.,... Madar, R. (2005). Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes. Materials Science Forum, 483, 3-8. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.3

MLA:

Pons, Michel, et al. "Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes." Materials Science Forum 483 (2005): 3-8.

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