Conductance Enhancement of Nano-Particulate Indium Tin Oxide Layers Fabricated by Printing Technique

Groß M, Maksimenko I, Faber H, Linse N, Wellmann P (2008)

Publication Language: English

Publication Status: Published

Publication Type: Conference contribution

Publication year: 2008

Publisher: NSTI, Nano Science and Technology Institute

Pages Range: 786-789

Conference Proceedings Title: Nanotech 2008, Vol. 1-3

Event location: Boston, Massachusetts US

ISBN: 978-1-4200-8503-7

Abstract

To understand the mechanisms behind the conductance improvement and to fathom the limits we did some investigations: long-term resistance measurements gave an insight in oxygen vacancy balance concentration. From infrared absorption measurements we inferred the free charge carrier density and at present we carry out XPS measurements which yield information about the alteration of oxygen vacancy concentration. Considering these data we discuss two conductance improving mechanisms: The increase of the free charge carrier density by a rise of oxygen vacancy concentration as well as a release of trapped charge carriers from the aggregate surfaces.

Authors with CRIS profile

Ilja Maksimenko Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Hendrik Faber Professur für Werkstoffwissenschaften (Polymerwerkstoffe) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

How to cite

APA:

Groß, M., Maksimenko, I., Faber, H., Linse, N., & Wellmann, P. (2008). Conductance Enhancement of Nano-Particulate Indium Tin Oxide Layers Fabricated by Printing Technique. In NSTI, Nano Science and Technology Institute (Eds.), Nanotech 2008, Vol. 1-3 (pp. 786-789). Boston, Massachusetts, US: NSTI, Nano Science and Technology Institute.

MLA:

Groß, Michael, et al. "Conductance Enhancement of Nano-Particulate Indium Tin Oxide Layers Fabricated by Printing Technique." Proceedings of the 11th Annual NSTI Nanotechnology Conference and Trade Show (Nanotech 2008), Boston, Massachusetts Ed. NSTI, Nano Science and Technology Institute, NSTI, Nano Science and Technology Institute, 2008. 786-789.

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