Raman spectra of epitaxial graphene on SiC(0001)

Journal article


Publication Details

Author(s): Röhrl J, Hundhausen M, Emtsev K, Seyller T, Graupner R, Ley L
Journal: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publication year: 2008
Volume: 92
Pages range: 201918
ISSN: 0003-6951


Abstract


We present Raman spectra of epitaxial graphene layers grown on 63×63 reconstructed silicon carbide surfaces during annealing at elevated temperature. In contrast to exfoliated graphene a significant phonon hardening is observed. We ascribe that phonon hardening to a minor part to the known electron transfer from the substrate to the epitaxial layer, and mainly to mechanical strain that builds up when the sample is cooled down after annealing. Due to the larger thermal expansion coefficient of silicon carbide compared to the in-plane expansion coefficient of graphite this strain is compressive at room temperature. © 2008 American Institute of Physics.



FAU Authors / FAU Editors

Graupner, Ralf PD Dr.
Naturwissenschaftliche Fakultät
Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Röhrl, J., Hundhausen, M., Emtsev, K., Seyller, T., Graupner, R., & Ley, L. (2008). Raman spectra of epitaxial graphene on SiC(0001). Applied Physics Letters, 92, 201918. https://dx.doi.org/10.1063/1.2929746

MLA:
Röhrl, Jonas, et al. "Raman spectra of epitaxial graphene on SiC(0001)." Applied Physics Letters 92 (2008): 201918.

BibTeX: 

Last updated on 2018-09-08 at 14:08