Raman spectra of epitaxial graphene on SiC(0001)

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Details zur Publikation

Autor(en): Röhrl J, Hundhausen M, Emtsev K, Seyller T, Graupner R, Ley L
Zeitschrift: Applied Physics Letters
Verlag: American Institute of Physics (AIP)
Jahr der Veröffentlichung: 2008
Band: 92
Seitenbereich: 201918
ISSN: 0003-6951


We present Raman spectra of epitaxial graphene layers grown on 63×63 reconstructed silicon carbide surfaces during annealing at elevated temperature. In contrast to exfoliated graphene a significant phonon hardening is observed. We ascribe that phonon hardening to a minor part to the known electron transfer from the substrate to the epitaxial layer, and mainly to mechanical strain that builds up when the sample is cooled down after annealing. Due to the larger thermal expansion coefficient of silicon carbide compared to the in-plane expansion coefficient of graphite this strain is compressive at room temperature. © 2008 American Institute of Physics.

FAU-Autoren / FAU-Herausgeber

Graupner, Ralf PD Dr.
Naturwissenschaftliche Fakultät
Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik

Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


Röhrl, J., Hundhausen, M., Emtsev, K., Seyller, T., Graupner, R., & Ley, L. (2008). Raman spectra of epitaxial graphene on SiC(0001). Applied Physics Letters, 92, 201918. https://dx.doi.org/10.1063/1.2929746

Röhrl, Jonas, et al. "Raman spectra of epitaxial graphene on SiC(0001)." Applied Physics Letters 92 (2008): 201918.


Zuletzt aktualisiert 2018-09-08 um 14:08