Röhrl J, Hundhausen M, Emtsev K, Seyller T, Graupner R, Ley L (2008)
Publication Type: Journal article
Publication year: 2008
Publisher: American Institute of Physics (AIP)
Book Volume: 92
Pages Range: 201918
DOI: 10.1063/1.2929746
We present Raman spectra of epitaxial graphene layers grown on 63×63 reconstructed silicon carbide surfaces during annealing at elevated temperature. In contrast to exfoliated graphene a significant phonon hardening is observed. We ascribe that phonon hardening to a minor part to the known electron transfer from the substrate to the epitaxial layer, and mainly to mechanical strain that builds up when the sample is cooled down after annealing. Due to the larger thermal expansion coefficient of silicon carbide compared to the in-plane expansion coefficient of graphite this strain is compressive at room temperature. © 2008 American Institute of Physics.
APA:
Röhrl, J., Hundhausen, M., Emtsev, K., Seyller, T., Graupner, R., & Ley, L. (2008). Raman spectra of epitaxial graphene on SiC(0001). Applied Physics Letters, 92, 201918. https://dx.doi.org/10.1063/1.2929746
MLA:
Röhrl, Jonas, et al. "Raman spectra of epitaxial graphene on SiC(0001)." Applied Physics Letters 92 (2008): 201918.
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