On the lattice parameters of silicon carbide

Beitrag in einer Fachzeitschrift

Details zur Publikation

Autorinnen und Autoren: Stockmeier M, Müller R, Sakwe A, Wellmann P, Magerl A
Zeitschrift: Journal of Applied Physics
Verlag: American Institute of Physics (AIP)
Jahr der Veröffentlichung: 2009
Band: 105
Heftnummer: 3
ISSN: 0021-8979
Sprache: Englisch


The thermal expansion coefficients of the hexagonal SiC polytypes 4H and 6H and with Al and N dopants have been determined for temperatures between 300 and 1770 K. Further, a set of the room temperature lattice parameters in dependence on doping with N, Al, and B has been obtained. Data for the thermal expansion were taken on a triple axis diffractometer for high energy x rays with a photon energy of 60 keV, which allows the use of large single crystals with a volume of at least 6x6x6 mm(3) without the need to consider absorption. The room temperature measurements for samples with different dopants have been performed on a four-circle diffractometer. The thermal expansion coefficients along the a- and c-directions, alpha(11) and alpha(33), increase from 3x10(-6) K(-1) at 300 K to 6x10(-6) K(-1) at 1750 K. It is found that alpha(11) and alpha(33) are isotropic within 10(7) K(-1). At high temperatures both coefficients for doped samples are similar to 0.2x10(-6) and 0.3x10(-6) K(-1) lower than for the undoped material.

FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Müller, Robin
Lehrstuhl für Werkstoffwissenschaften (Allgemeine Werkstoffeigenschaften)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Stockmeier, M., Müller, R., Sakwe, A., Wellmann, P., & Magerl, A. (2009). On the lattice parameters of silicon carbide. Journal of Applied Physics, 105(3). https://dx.doi.org/10.1063/1.3074301

Stockmeier, Matthias, et al. "On the lattice parameters of silicon carbide." Journal of Applied Physics 105.3 (2009).


Zuletzt aktualisiert 2018-10-08 um 06:24