In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction
Beitrag in einer Fachzeitschrift
(Originalarbeit)
Details zur Publikation
Autor(en): Wellmann P, Konias K, Hens P, Hock R, Magerl A
Zeitschrift: → Materials Science Forum |
Jahr der Veröffentlichung: 2009
Band: 615-617
Tagungsband: Materials Science Forum Vols. 615-617
Seitenbereich: 23-26
ISSN: 0255-5476
eISSN: 1662-9752
Sprache: Englisch
Abstract
This work reports on the in-situ observation of a polytype switch during physical vapor transport (PVT) growth of bulk SiC crystals by x-ray diffraction. A standard PVT reactor for 2 '' and 3 '' bulk growth was set up in a high-energy x-ray diffraction lab. Due to the high penetration depth of the high-energy x-ray beam no modification of the PVT reactor was necessary in order to measure Laue diffraction patterns of the growing crystal with good signal to noise ratio. We report for the first time upon the in-situ observation of polytype switching during SiC bulk PVT growth.
FAU-Autoren / FAU-Herausgeber
| | | Graduiertenzentrum der FAU |
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| | | Professur für Kristallographie und Strukturphysik |
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| | | Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) |
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| Magerl, Andreas Prof. Dr. |
| | Lehrstuhl für Kristallographie und Strukturphysik |
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| Wellmann, Peter Prof. Dr.-Ing. |
| | Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) |
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Zitierweisen
APA: | Wellmann, P., Konias, K., Hens, P., Hock, R., & Magerl, A. (2009). In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction. Materials Science Forum, 615-617, 23-26. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.23 |
MLA: | Wellmann, Peter, et al. "In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction." Materials Science Forum 615-617 (2009): 23-26. |