In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction

Wellmann P, Konias K, Hens P, Hock R, Magerl A (2009)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2009

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 615-617

Pages Range: 23-26

Conference Proceedings Title: Materials Science Forum Vols. 615-617

Event location: Barcelona

DOI: 10.4028/www.scientific.net/MSF.615-617.23

Abstract

This work reports on the in-situ observation of a polytype switch during physical vapor transport (PVT) growth of bulk SiC crystals by x-ray diffraction. A standard PVT reactor for 2 '' and 3 '' bulk growth was set up in a high-energy x-ray diffraction lab. Due to the high penetration depth of the high-energy x-ray beam no modification of the PVT reactor was necessary in order to measure Laue diffraction patterns of the growing crystal with good signal to noise ratio. We report for the first time upon the in-situ observation of polytype switching during SiC bulk PVT growth.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Katja Konias Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Philip Hens Graduiertenzentrum der FAU Rainer Hock Professur für Kristallographie und Strukturphysik Andreas Magerl Lehrstuhl für Kristallographie und Strukturphysik

How to cite

APA:

Wellmann, P., Konias, K., Hens, P., Hock, R., & Magerl, A. (2009). In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction. Materials Science Forum, 615-617, 23-26. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.23

MLA:

Wellmann, Peter, et al. "In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction." Materials Science Forum 615-617 (2009): 23-26.

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