Nucleation Control of Cubic Silicon Carbide on 6H-Substrates

Vasiliauskas R, Marinova M, Hens P, Wellmann P, Syvajarvi M, Yakimova R (2012)

Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2012

Journal

Crystal Growth & Design American Chemical Society

Publisher: American Chemical Society

Book Volume: 12

Pages Range: 197-204

Journal Issue: 1

DOI: 10.1021/cg200929r

Abstract

The nucleation of cubic (3C) SiC on on-axis 6H-SiC was investigated in the temperature range 1500-1775 degrees C by the technique of sublimation epitaxy. We have studied two different cases: (i) the initial homoepitaxial growth of 6H-SiC followed by nucleation of 3C-SiC and (ii) nucleation of homoepitaxial 6H-SiC islands. The supersaturation in the growth cell was calculated using the modeled source to substrate temperature difference. We show that, at low temperature and supersaturation, growth of 6H-SiC commences in spiral growth mode, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation is high enough, the 3C-SiC nucleates as two-dimensional islands on terraces of the homoepitaxial 6H-SiC. Detailed structural study indicates that the 3C-SiC began to grow on defect free surfaces. From the experimental and modeling results, we show that the growth parameter window for 3C-SiC is rather narrow. Deviation from it can result in 6H-SiC growth in spiral or 2D-nucleation mode, which suggests the importance of knowledge of supersaturation.

Authors with CRIS profile

Philip Hens Graduiertenzentrum der FAU Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Linköping University SE Sweden (SE) Aristotle University of Thessaloniki GR Greece (GR)

How to cite

APA:

Vasiliauskas, R., Marinova, M., Hens, P., Wellmann, P., Syvajarvi, M., & Yakimova, R. (2012). Nucleation Control of Cubic Silicon Carbide on 6H-Substrates. Crystal Growth & Design, 12(1), 197-204. https://dx.doi.org/10.1021/cg200929r

MLA:

Vasiliauskas, Remigijus, et al. "Nucleation Control of Cubic Silicon Carbide on 6H-Substrates." Crystal Growth & Design 12.1 (2012): 197-204.

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