Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Edmonds MT, Pakes CI, Mammadov S, Zhang W, Tadich A, Ristein J, Ley L
Zeitschrift: Applied Physics Letters
Verlag: American Institute of Physics (AIP)
Jahr der Veröffentlichung: 2011
Band: 88
Seitenbereich: 102101
ISSN: 0003-6951


Abstract


Simultaneous measurements of work function (φ) and C 1s core level shift were employed to determine the change in electron affinity (X) and band bending as a function of hole sheet density on H-terminated diamond for atmospheric and fullerene (C60 F48) induced surface conductivity. Contrary to earlier investigations, it is shown that changes in work function do not reflect variations in the position of the surface Fermi level in response to surface transfer doping. Instead, with a transition from -0.96 to -0.33 eV, X accounts for a significant amount of the change in φ for hole densities between 5× 108 and 4× 1013 cm-2. © 2011 American Institute of Physics.



FAU-Autoren / FAU-Herausgeber

Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Mammadov, Samir
Lehrstuhl für Laserphysik
Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik


Autor(en) der externen Einrichtung(en)
La Trobe University


Zitierweisen

APA:
Edmonds, M.T., Pakes, C.I., Mammadov, S., Zhang, W., Tadich, A., Ristein, J., & Ley, L. (2011). Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond. Applied Physics Letters, 88, 102101. https://dx.doi.org/10.1063/1.3561760

MLA:
Edmonds, M. T., et al. "Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond." Applied Physics Letters 88 (2011): 102101.

BibTeX: 

Zuletzt aktualisiert 2018-09-08 um 15:53