Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques

Kumar S, Sarau G, Tessarek C, Göbelt M, Christiansen S, Singh R (2015)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2015

Journal

Publisher: Institute of Physics Publishing

Book Volume: 26

Article Number: 335603

Journal Issue: 33

DOI: 10.1088/0957-4484/26/33/335603

Abstract

High quality single crystalline zinc gallate (ZnGa2O4) nanowires (NWs) were grown using a combination of chemical vapor deposition and atomic layer deposition techniques. Morphological, structural and optical investigations revealed the formation of Ga2O3-ZnO core-shell NWs and their conversion into ZnGa2O4 NWs after annealing via a solid state reaction. This material conversion was systematically confirmed for single NWs by various measurement techniques including scanning and transmission electron microscopy, Raman spectroscopy and voltage-dependent cathodoluminescence. Moreover, a model system based on the obtained results has been provided explaining the formation mechanism of the ZnGa2O4 NWs.

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How to cite

APA:

Kumar, S., Sarau, G., Tessarek, C., Göbelt, M., Christiansen, S., & Singh, R. (2015). Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques. Nanotechnology, 26(33). https://dx.doi.org/10.1088/0957-4484/26/33/335603

MLA:

Kumar, Sudheer, et al. "Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques." Nanotechnology 26.33 (2015).

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