Growth of GaN micro- and nanorods on graphene-covered sapphire: Enabling conductivity to semiconductor nanostructures on insulating substrates

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Heilmann M, Sarau G, Göbelt M, Latzel M, Sadhujan S, Tessarek C, Christiansen S
Zeitschrift: Crystal Growth and Design
Verlag: American Chemical Society
Jahr der Veröffentlichung: 2015
Band: 15
Heftnummer: 5
Seitenbereich: 2079-2086
ISSN: 1528-7483
eISSN: 1528-7505
Sprache: Englisch


Abstract


The self-catalyzed growth of vertically aligned and hexagonally shaped GaN micro- and nanorods on graphene transferred onto sapphire is achieved through metal-organic vapor phase epitaxy. However, a great influence of the underlying substrate is evident, since vertically aligned structures with a regular shape could not be grown on graphene transferred to SiO2. The optical properties of the regular GaN nanorods were investigated by spatially and spectrally resolved cathodoluminescence showing defect related emission only near the interface between the sapphire substrate and nanorods but not from their upper part. Micro-raman spectroscopy confirms that the single-layer graphene remains virtually unchanged in terms of the Raman signal, even after undergoing high temperatures (∼1200 °C) during nanorod growth. Furthermore, Raman mapping demonstrates that GaN structures predominantly grow on defective parts of graphene, giving new insight into the nucleation and growth mechanism of semiconductors on graphene. To validate the conductivity of graphene, when being attached to the sapphire substrate and after the nanorod growth, current-voltage investigations were carried out on single, as-grown, GaN nanorods with a nanoprober in a scanning electron microscope. These measurements demonstrate the viability of graphene as a conductive electrode, for example, as a back contact for GaN nanorods grown on insulating sapphire.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Heilmann, Martin
Lehrstuhl für Experimentalphysik (Optik)
Latzel, Michael
Lehrstuhl für Experimentalphysik (Optik)


Zusätzliche Organisationseinheit(en)
Graduiertenkolleg 1896/2 In situ Mikroskopie mit Elektronen, Röntgenstrahlen und Rastersonden
Exzellenz-Cluster Engineering of Advanced Materials
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)


Einrichtungen weiterer Autorinnen und Autoren

Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light


Forschungsbereiche

C Photonic and Optical Materials
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Heilmann, M., Sarau, G., Göbelt, M., Latzel, M., Sadhujan, S., Tessarek, C., & Christiansen, S. (2015). Growth of GaN micro- and nanorods on graphene-covered sapphire: Enabling conductivity to semiconductor nanostructures on insulating substrates. Crystal Growth and Design, 15(5), 2079-2086. https://dx.doi.org/10.1021/cg5015219

MLA:
Heilmann, Martin, et al. "Growth of GaN micro- and nanorods on graphene-covered sapphire: Enabling conductivity to semiconductor nanostructures on insulating substrates." Crystal Growth and Design 15.5 (2015): 2079-2086.

BibTeX: 

Zuletzt aktualisiert 2019-03-06 um 16:43