Status of SiC bulk growth processes

Chaussende D, Wellmann P, Pons M (2007)

Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2007

Journal

Journal of Physics D-Applied Physics Institute of Physics: Hybrid Open Access

Publisher: Institute of Physics: Hybrid Open Access

Book Volume: 40

Pages Range: 6150-6158

Journal Issue: 20

DOI: 10.1088/0022-3727/40/20/S02

Abstract

The present paper gives an overview of the different routes to grow SiC single crystals. The focus is put on the new emerging processes compared with the well established ones. A review of the process engineering modelling is given. Finally, some selected results are pointed out as they should be considered for the future development of SiC material.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Institut National Polytechnique de Grenoble - Grenoble Institute of Technology FR France (FR)

How to cite

APA:

Chaussende, D., Wellmann, P., & Pons, M. (2007). Status of SiC bulk growth processes. Journal of Physics D-Applied Physics, 40(20), 6150-6158. https://dx.doi.org/10.1088/0022-3727/40/20/S02

MLA:

Chaussende, D., Peter Wellmann, and Michel Pons. "Status of SiC bulk growth processes." Journal of Physics D-Applied Physics 40.20 (2007): 6150-6158.

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