The formation of CuInSe2 thin-film solar cell absorbers by laser annealing of electrodeposited precursors

Jost SG, Schurr R, Hergert F, Hock R, Schulze J, Kirbs A, Voss T, Purwins M, Palm J, Mys I (2008)


Publication Status: Published

Publication Type: Journal article

Publication year: 2008

Journal

Publisher: ELSEVIER SCIENCE BV

Book Volume: 92

Pages Range: 410-417

Journal Issue: 4

DOI: 10.1016/j.solmat.2007.10.002

Abstract

The formation of the compound semiconductor CuInSe2 by laser annealing of electroplated precursor films in inert gas atmosphere represents an entire non-vacuum production process of thin-film solar cell absorbers. Besides this technological aspect, the impact of extreme annealing rates on structural properties of the resulting semiconductor is interesting from a fundamental research point of view. For this reason, we compared absorbers processed by laser annealing with absorbers annealed with moderate heating rates in the range of 1 K/s by means of X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive X-ray analysis (EDX). All absorbers processed with laser or furnace annealing consist of crystalline CuInSe2 in the chalcopyrite crystal structure with a high degree of cation disorder. We show that laser annealing does not lead to unintentional selenium loss during the semiconductor formation process. (c) 2007 Elsevier B.V. All rights reserved.

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APA:

Jost, S.G., Schurr, R., Hergert, F., Hock, R., Schulze, J., Kirbs, A.,... Mys, I. (2008). The formation of CuInSe2 thin-film solar cell absorbers by laser annealing of electrodeposited precursors. Solar Energy Materials and Solar Cells, 92(4), 410-417. https://doi.org/10.1016/j.solmat.2007.10.002

MLA:

Jost, Stefan Georg, et al. "The formation of CuInSe2 thin-film solar cell absorbers by laser annealing of electrodeposited precursors." Solar Energy Materials and Solar Cells 92.4 (2008): 410-417.

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